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directfet power mosfet
applicable directfet outline and substrate outline rohs compliant, halogen free lead-free (qualified up to 260c reflow) ideal for high performance isolated converter primary switch socket optimized for synchronous rectification low conduction losses high cdv/dt immunity low profile (<0.7mm) dual sided cooling compatible compatible with existing surface mount techniques industrial qualified fig 1. typical on-resistance vs. gate voltage click on the hyperlink (to the relevant technical document) for more details. click on the hyperlink (to the directfet website) for more details surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part. repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.021mh, r g = 25 , i as = 160a. fig 2. typical on-resistance vs. drain current sb sc m2 m4 l4 l6 l8 directfet isometric

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' . v dss v gs r ds(on) 40v min 20v max 0.70m @ 10v q g tot q gd v gs(th) 220nc 81nc 2.8v absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) a i d @ t a = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current e as single pulse avalanche energy mj i ar avalanche current a 160 375 270 max. 190 46 1070 20 40 270 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v gs, gate -to -source voltage (v) 0 2 4 6 8 10 t y p i c a l r d s ( o n ) ( m ) i d = 160a t j = 125c t j = 25c 0 40 80 120 160 200 i d , drain current (a) 0.85 0.86 0.87 0.88 0.89 0.90 0.91 0.92 0.93 t y p i c a l r d s ( o n ) ( m ) v gs = 10v d d g s s s s s s s s

ordering information base part number package type orderable part number form quantity irf7739l1trpbf directfet large can tape and reel 4000 irf7739l1trpbf standard pack

repetitive rating; pulse width limited by max. junction temperature.
pulse width 400 s; duty cycle 2%. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 40 ??? ??? v ? v dss / t j breakdown voltage temp. coefficient ??? 0.008 ??? v/c r ds(on) static drain-to-source on-resistance ??? 0.70 1.0 m v gs(th) gate threshold voltage 2.0 2.8 4.0 v v gs(th) / t j gate threshold voltage coefficient ??? -6.7 ??? mv/c i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 280 ??? ??? s q g total gate charge ??? 220 330 q gs1 pre-vth gate-to-source charge ??? 46 ??? q gs2 post-vth gate-to-source charge ??? 19 ??? nc q gd gate-to-drain charge ??? 81 120 q godr gate charge overdrive ??? 74 ??? see fig. 9 q sw switch charge (q gs2 + q gd ) ??? 100 ??? q oss output charge ??? 83 ??? nc r g gate resistance ??? 1.5 ??? t d(on) turn-on delay time ??? 21 ??? t r rise time ???71??? t d(off) turn-off delay time ??? 56 ??? ns t f fall time ??? 42 ??? c iss input capacitance ??? 11880 ??? c oss output capacitance ??? 2510 ??? pf c rss reverse transfer capacitance ??? 1240 ??? c oss output capacitance ??? 8610 ??? c oss output capacitance ??? 2230 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 110 (body diode) a i sm pulsed source current ??? ??? 1070 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 87 130 ns q rr reverse recovery charge ??? 250 380 nc mosfet symbol r g =1.8 v ds = 25v conditions v gs = 0v, v ds = 32v, f=1.0mhz v gs = 0v, v ds = 1.0v, f=1.0mhz v ds = 16v, v gs = 0v v dd = 20v, v gs = 10v v gs = 0v ? = 1.0mhz i d = 160a v ds = v gs , i d = 250 a v ds = 40v, v gs = 0v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1.0ma v gs = 10v, i d = 160a t j = 25c, i f = 160a, v dd = 20v di/dt = 100a/ s t j = 25c, i s = 160a, v gs = 0v showing the integral reverse p-n junction diode. i d = 160a v ds = 32v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v v gs = 10v v ds = 10v, i d = 160a v ds = 20v

fig 3. maximum effective transient thermal impedance, junction-to-case
surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple incontact with top (drain) of part.
used double sided cooling, mounting pad with large heatsink.
mounted on minimum footprint full size board with metalized back and with small clip heatsink. r is measured at t j of approximately 90c. surface mounted on 1 in. square cu board (still air). mounted on minimum footprint full size board with metalized back and with small clip heatsink. (still air) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.1080 0.000171 0.6140 0.053914 0.4520 0.006099 1.47e-05 0.036168 absolute maximum ratings parameter units p d @t c = 25c power dissipation w p d @t c = 100c power dissipation p d @t a = 25c power dissipation t p peak soldering temperature c t j operating junction and t st g storage temperature range thermal resistance parameter typ. max. units r ??? 40 r 12.5 ??? r ja junction-to-ambient 20 ??? c/w r j-can junction-to-can ??? 1.2 r j-pcb junction-to-pcb mounted ??? 0.4 270 -55 to + 175 max. 3.8 125 63

fig 5. typical output characteristics fig 4. typical output characteristics fig 6. typical transfer characteristics fig 7. normalized on-resistance vs. temperature fig 8. typical capacitance vs. drain-to-source voltage fig 9. typical total gate charge vs. gate-to-source voltage 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 60 s pulse width tj = 25c 4.5v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 60 s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 2 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 25v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 160a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 50 100 150 200 250 300 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v v ds = 20v i d = 160a

fig 13. typical threshold voltage vs. junction temperature fig 12. maximum drain current vs. case temperature fig 10. typical source-drain diode forward voltage fig11. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 175c single pulse 100 sec 1msec 10msec dc 25 50 75 100 125 150 175 t c , case temperature (c) 0 50 100 150 200 250 300 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 175 200 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a i d = 1.0ma i d = 1.0a 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 800 900 1000 1100 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 29a 46a bottom 160a

fig 17.
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"!# for n-channel hexfet power mosfets fig 15. typical avalanche current vs. pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 ) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 19a, 19b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) =
t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t a p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period $
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1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming tj = 150c and tstart =25c (single pulse) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 300 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cy cle i d = 160a
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fig 18a. gate charge test circuit fig 18b. gate charge waveform fig 19b. unclamped inductive waveforms t p v (br)dss i as fig 19a. unclamped inductive test circuit fig 20b. switching time waveforms fig 20a. switching time test circuit r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v ' vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s 20k v ds 90% 10% v gs t d(on) t r t d(off) t f 9 ( ) 1 * $
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please see an-1035 for directfet assembly details and stencil and substrate design recommendations g = gate d = drain s = source g d s d dd d d s s ss s s s note: for the most current drawing please refer to ir website at http://www.irf.com/package/
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directfet part marking

please see an-1035 for directfet assembly details and stencil and substrate design recommendations note: for the most current drawing please refer to ir website at http://www.irf.com/package/ part number logo batch number date code line above the last character of the date code indicates "lead-free" gate marking + code a b c d e f g h j k l m r p 0.017 0.029 0.003 0.007 0.057 0.104 0.236 0.048 0.026 0.024 max 0.360 0.280 0.38 0.68 0.02 0.09 1.35 2.55 5.90 1.18 0.55 0.58 min 9.05 6.85 0.42 0.74 0.08 0.17 1.45 2.65 6.00 1.22 0.65 0.62 max 9.15 7.10 0.015 0.027 0.003 0.001 0.100 0.053 0.232 0.046 0.023 0.022 min 0.270 0.356 metric imperial dimensions 0.98 1.02 0.73 0.77 0.040 0.039 0.030 0.029 l1 0.215 5.35 5.45 0.211

directfet tape & reel dimension (showing component orientation). note: for the most current drawing please refer to ir website at http://www.irf.com/package/ loaded tape feed direction note: controlling dimensions in mm code a b c d e f g h imperial min 4.69 0.154 0.623 0.291 0.283 0.390 0.059 0.059 max 12.10 4.10 16.30 7.60 7.40 10.10 n.c 1.60 min 11.90 3.90 15.90 7.40 7.20 9.90 1.50 1.50 metric dimensions max 0.476 0.161 0.642 0.299 0.291 0.398 n.c 0.063 + qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release. * industrial qualification standards except autoclave test conditions ()* + ,)-
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*! ! http://www .irf.com/whoto-call/ reel dimensions note: controlling dimensions in mm std reel quantity is 4000 parts. (ordered as irf7739l1trpbf). max n.c n.c 0.520 n.c 3.940 0.880 0.720 0.760 imperial min 330.00 20.20 12.80 1.50 99.00 n.c 16.40 15.90 standard option (qty 4000) code a b c d e f g h max n.c n.c 13.20 n.c 100.00 22.40 18.40 19.40 min 12.992 0.795 0.504 0.059 3.900 n.c 0.650 0.630 metric qualification level msl 1 (per jedec j-std-020d ??? ) rohs compliant yes moisture sensitivity level directfet qualification information ? industrial ?? * revision history date comments 2/12/2013 tr1 option removed and tape & reel info updated accordingly. hyperlinks added throw-out the document

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